CPH5516 no. a0196-1/5 applications ? relay drivers, lamp drivers, motor drivers, igbt gate drive. features ? composite type with a pnp transistor and an npn transistor contained in one package, facilitating high-density mounting. ? ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--30) 40 v collector-to-emitter voltage v ceo (--) 30 v emitter-to-base voltage v ebo (--) 5 v collector current i c (--) 2 a collector current (pulse) i cp pw 1s (--) 6 a base current i b (--) 400 ma collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8mm) 0.9 w total power dissipation p t mounted on a ceramic board (600mm 2 5 0.8mm) 1.2 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--) 30v, i e =0a (--) 0.1 m a emitter cutoff current i ebo v eb =(--) 4v, i c =0a (--) 0.1 m a dc current gain h fe v ce =(--) 2v, i c =(--) 100ma 200 560 gain-bandwideth product f t v ce =(--) 10v, i c =(--) 300ma (440) 400 mhz output capacitance cob v cb =(--) 10v, f=1mhz (17) 12 pf marking : ek continued on next page. ordering number : ena0196 71206 / 33106ea ms im tb-00002176 CPH5516 pnp / npn epitaxial planar silicon transistors high-current switching applications sanyo semiconductors data sheet any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5516 no. a0196-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--) 1.5a, i b =(--) 75ma (--170) 160 (--260) 240 mv base-to-emitter saturation voltage v be (sat) i c =(--) 1.5a, i b =(--) 75ma (--) 0.94 (--) 1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--) 10 m a, i e =0a (--30) 40 v collector-to-emitter breakdown voltage v (br)ceo i c =(--) 1ma, r be = (--) 30 v emitter-to-base breakdown voltage v (br)ebo i e =(--) 10 m a, i c =0a (--) 5 v turn-on time t on see specified test circuit. (45) 40 ns storage time t stg see specified test circuit. (200) 350 ns fall time t f see specified test circuit. (23) 30 ns package dimensions electrical connection unit : mm 7017-009 switching time test circuit 2.9 0.95 0.05 12 3 4 5 0.2 0.7 0.9 2.8 1.6 0.6 0.6 0.2 0.4 0.15 1 : collector (npn tr) 2 : collector (pnp tr) 3 : base (pnp tr) 4 : emitter common 5 : base (npn tr) sanyo : cph5 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a collector current, i c -- a --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --4ma --10ma --15ma --8ma --6ma --30ma --20ma --40ma --50ma --2ma it08907 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 it08908 50ma 40ma 10ma 15ma 8ma 6ma 4ma 2ma i b =0ma 30ma 20ma [pnp] [npn] i b =0ma 543 12 1 : collector (npn tr) 2 : collector (pnp tr) 3 : base (pnp tr) 4 : emitter common 5 : base (npn tr) top view v r r b v cc =12v v be = --5v + + 50 w input output r l =24 w 100 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =500ma for pnp, the polarity is reversed. www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5516 no. a0196-3/5 h fe -- i c f t -- i c h fe -- i c cob -- v cb f t -- i c cob -- v cb collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf 7 100 2 3 5 7 1000 5 7 100 2 3 5 7 1000 7 100 2 3 5 7 1000 5 7 100 2 3 5 7 1000 5 7 2 3 5 7 10 23 57 0.1 1.0 23 57 10 23 5 2 10 3 5 7 23 57 --0.1 --1.0 23 57 --10 23 5 ta=75 c --25 c 25 c 23 57 0.01 0.1 23 57 1.0 23 f=1mhz f=1mhz it08915 it08916 it08911 it08913 it08912 it08914 v ce = --2v v ce =2v 23 57 --0.01 --0.1 23 57 --1.0 23 23 57 0.01 0.1 23 57 1.0 23 v ce = --10v v ce =10v 23 57 --0.01 --0.1 23 57 --1.0 23 --25 c ta=75 c 25 c i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a --0.25 --0.50 --0.75 --1.00 --1.25 --1.50 --1.75 --2.00 0 v ce = --2v it08909 0 --0.2 --0.4 --0.6 --0.8 --1.0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 25 c --25 c ta=75 c 25 c --25 c ta=75 c it08910 0 0.2 0.4 0.6 0.8 1.0 v ce =2v [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5516 no. a0196-4/5 dc operation 10ms i cp =6a i c =2a 1ms 100 m s 500 m s 100ms v be (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v 2 3 5 7 1.0 2 3 23 57 0.01 0.1 23 57 1.0 23 2 3 5 7 --1.0 2 3 23 57 --0.01 --0.1 23 57 --1.0 23 i c / i b =20 i c / i b =20 ta= --25 c 75 c ta= --25 c 75 c it08919 it08920 25 c 25 c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v 5 0.01 2 3 5 7 0.1 2 3 5 7 23 57 0.01 0.1 23 57 1.0 23 --0.01 2 3 5 7 --0.1 2 3 5 23 57 --0.01 --0.1 23 57 --1.0 23 --25 c ta=75 c i c / i b =20 i c / i b =20 --25 c ta=75 c it08917 it08918 25 c 25 c [pnp] [npn] [pnp] [npn] p c -- ta collector current, i c -- a ambient temperature, ta -- c collector dissipation, p c -- w 1.4 0 0.2 0.4 0.6 0.8 0.9 1.0 1.2 0 20 40 60 80 100 120 140 160 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 0.1 0.01 23 57 2 0.01 0.1 357 2 1.0 it10742 it10743 1unit [pnp / npn] 35 235 7 10 ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) for pnp, minus sign is omitted. collector-to-emitter voltage, v ce -- v mounted on a ceramic board (600mm 2 5 0.8mm) total dissipation forward bias a s o www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5516 no. a0196-5/5 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2006. specifications and information herein are subject to change without notice. www.datasheet.co.kr datasheet pdf - http://www..net/
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